Phosphor-free white-light light-emitting diodes based on prestrained InGaN/GaN quantum wells
Journal
2007 International Nano-Optelectronics Workshop, iNOW
Pages
154-155
Date Issued
2007
Author(s)
Abstract
A prestrained MOCVD growth technique is introduced to enhance the indium incorporation of InGaN/GaN quantum wells for effectively emitting yellow-red light such that white-light light-emitting diodes can be fabricated without using phosphors.
Type
conference paper