Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
Journal
Device Research Conference
Pages
127-128
Date Issued
2009
Author(s)
Lin, T.D.
Wu, Y.D.
Chang, Y.C.
Chiang, T.H.
Chuang, C.Y.
Lin, C.A.
Chang, W.H.
Chiu, H.C.
Tsai, W.
Kwo, J.
SDGs
Type
conference paper