Achieving nearly free fermi-level movement and Vthengineering in Ga2O3(Gd2O3)/In0.2Ga0.8As
Journal
Device Research Conference
Pages
127-128
Date Issued
2009
Author(s)
Lin, T.D.
Wu, Y.D.
Chang, Y.C.
Chiang, T.H.
Chuang, C.Y.
Lin, C.A.
Chang, W.H.
Chiu, H.C.
Tsai, W.
Kwo, J.
Abstract
In this work, we report a systematic study on n- and p-type Al 2 O3/Ga2O3(Gd 2 O3) [GGO]/In0.2Ga 0.8 As/GaAs MOS capacitors (MOSCAPs) using metal gates Al, TiN, and Ni of work functions of 4.1, 4.8, and 5.2 V, respectively. We demonstrated for the first time nearly ideal characteristics of the In 0.2 Ga 0.8 As based MOSCAPs, and remarkably well-controlled V th . The GGO/In 0.2 Ga 0.8 As with a perfected interface, negligible bulk traps, and high temperature thermal stability allows the meaningful studies of the n and p-MOSCAPs using metal gates with different work functions. These devices exhibited extremely low leakage current densities, symmetrical C-V characteristics with negligible frequency dispersion, low D it , and gate-bias-modulated Fermi-level with a high efficiency over 80% near the midgap.
SDGs
Type
conference paper