Three-dimensional simulation of vertical zone-melting crystal growth: symmetry breaking to multiple states
Resource
Journal of Crystal Growth 208 (1-4): 327-340
Journal
Journal of Crystal Growth
Journal Issue
208
Pages
327-340
Date Issued
2000
Date
2000
Author(s)
Lan, C. W.
Liang, M. C.
Abstract
For the first time three dimensional simulation is conducted for vertical zone-melting crystal growth, simultaneously considering the time-dependent fluid flow, heat transfer, and moving interfaces. The numerical method is based on an efficient finite-volume method with front tracking. The growth of 2-cm diameter GaAs in a quartz ampoule is used as an example. Under an axisymmetric operation, the two-dimensional solution can bifurcate subcritically to three-dimensional ones as the convection or superheating increases. The three-dimensional modes, which can have either one- or two-fold symmetry, depend on the equilibrium aspect ratio of the molten zone. Under normal gravity, the axisymmeric mode exists only for low superheating. Furthermore, the multiple states, including other multi-fold modes, are path dependent, which are further illustrated though the dynamics of heating and cooling operations.
Type
journal article
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