Enhancing nanocrystallite si electroluminescence by suppressing oxygen decomposition in high-temperature and low-plasma-power PECVD
Journal
Journal of The Electrochemical Society
Journal Volume
154
Journal Issue
8
Pages
-
Date Issued
2007
Date
2007
Author(s)
Lin, Chun-Jung
Abstract
This work demonstrates enhanced electroluminescence and quantum efficiency of a metal- Si Ox -Si light-emitting diode (MOSLED) fabricated on nanocrystallite Si (nc-Si)-embedded Si Ox plasma-enhanced chemical vapor deposition (PECVD) grown at high substrate temperature and threshold plasma power. Electron energy loss spectroscopy indicates that the energy loss of the primary electron transmitted throughout Si-rich Si Ox is reduced from 110 to 106 eV due to the formation of nc-Si. At low plasma power condition, the required dissociation energy of a N2 O molecule exceeds that of a Si H4 molecule, while increasing the deposition temperature during PECVD growth facilitates the out-diffusion of adsorbed oxygen atoms. Such enhanced deposition of Si-rich Si Ox with excess Si atoms and dense nc-Si after annealing is observed. As the deposition temperature for the Si-rich Si Ox increases from 300 to 400°C, the electroluminescent power and quantum efficiency of the nc-Si-based MOSLED are both improved by more than 1 order of magnitude. The output power, turn-on voltage, and internal and external quantum efficiency of the indium tin oxide/ Si Ox: nc-Sip-SiAl diode that was prepared at a substrate temperature of 400°C are 47 nW at 54 μA, 54.5 V, 5× 10-4, and 1.6× 10-5, respectively. © 2007 The Electrochemical Society.
SDGs
Other Subjects
Decomposition; Electroluminescence; Electron energy loss spectroscopy; High temperature effects; Oxygen; Plasma enhanced chemical vapor deposition; Silicon; Dissociation energy; Oxygen decomposition; Threshold plasma power; Nanocrystallites
Type
journal article
File(s)![Thumbnail Image]()
Loading...
Name
12.pdf
Size
945.67 KB
Format
Adobe PDF
Checksum
(MD5):999e1f73b986cd2345846f541566c8fe