Growth of high-quality relaxed SiGe films with an intermediate Si layer for strained Si n-MOSFETs

Resource

Semiconductor Science and Technology 21 (4): 479-485

Journal

Semiconductor Science and Technology

Journal Volume

21

Journal Issue

4

Pages

479-485

Date Issued

2006

Date

2006

Author(s)

Chen, P. S.

Lee, S. W.

Lee, M. H.

Liu, C. W.

URI

Type

journal article

File(s)

Name

73.pdf

Size

476.55 KB

Format

Adobe PDF

Checksum

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