Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates
Journal
Applied Physics Letters
Journal Volume
99
Journal Issue
2
Date Issued
2011
Author(s)
Abstract
Well-behaved Ge n-channel metal-oxide-semiconductor field-effect transistors on (001) substrates with dispersion-free, high on/off ratio, and high peak mobility are demonstrated. The interface trap density is effectively reduced down to 5 × 1011 cm−2 eV−1 near midgap by GeO2 passivation using rapid thermal oxidation, resulting in high peak mobility of ∼1050 cm2/Vs. The fast roll-off of the mobility at high electric field is probably due to the large surface roughness scattering. By applying uniaxial 〈110〉 tensile strain (0.08%) on 〈110〉 channel direction, the best mobility enhancement (12%) can be achieved. The calculated strain responses with proper stress configurations are consistent with experimental results.
SDGs
Type
journal article