Strain response of high mobility germanium n-channel metal-oxide- semiconductor field-effect transistors on (001) substrates

Journal

Applied Physics Letters

Journal Volume

99

Journal Issue

2

Date Issued

2011

Author(s)

Chen, Y.-T.

Lan, H.-S.

Hsu, W.

Fu, Y.-C.

Lin, J.-Y.

DOI

10.1063/1.3604417

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-79960504385&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/365224

Type

journal article