Application of irradiation-then-anneal treatment on the improvement of oxide properties in metal-oxide-semiconductor capacitors
Journal
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Journal Volume
31
Journal Issue
5 A
Pages
1290-1297
Date Issued
1992
Author(s)
Lin, Jin-Jenn
Abstract
The improvement in electrical characteristics of oxides, including oxide leakage current, radiation hardness, and hot-carrier resistance, in metal-oxide-semiconductor (MOS) capacitors by irradiation-then-anneal (ITA) treatments is studied. The ITA treatment is performed by Co-60 irradiation with a suitable dose followed by annealing in pure nitrogen at 400°C for 10 min. It is found that samples receiving ITA treatments exhibit better performance in oxide properties than those not receiving an ITA treatment. For the examination of oxide leakage current, the charge-then-decay method is employed. Devices with two ITA treatments exhibit a very slow gate voltage decay behavior even in a moist environment. Both the radiation hardness and the hot-carrier resistance are improved by the ITA treatment. The gate area dependence and the total dose effect in ITA treatment are also discussed. © 1992 The Japan Society of Applied Physics.
Subjects
Irradiation-then-anneal; MOS capacitor; Oxide; Property
SDGs
Other Subjects
Capacitors; Heat Treatment - Annealing; Leakage Currents; Semiconducting Silicon - Charge Carriers; Irradiation Anneal; Semiconductor Devices, MOS
Type
journal article