Fabrication and characterization of GaAsSb/GaAs type-II quantum well lasers
Date Issued
2004
Date
2004
Author(s)
Liao, Gaug-Hua
DOI
zh-TW
Abstract
本研究中，我們完成了GaAsSb/GaAs單量子井雷射的製造與特性測試，並與先前研製的雙量子井雷射的特性作分析比較。由於單量子井容雩
In this study, GaAsSb/GaAs single-quantum-well (SQW) lasers have been successfully fabricated and characterized. A comparison between SQW lasers and double-quantum-well (DQW) lasers which were previous fabricated is performed. Because the SQW structure of the lasers allows higher strain, we increased the Sb composition of the quantum well and reached 1292nm laser emission. However, the SQW lasers have lower quantum efficiency, higher internal loss, and severer blue shift below threshold. Temperature characteristics of both lasers were also investigated. By measuring the relationship between spontaneous emission intensity and injection current, we analyzed the components of the threshold current. The characteristic temperatures of the SQW and DQW lasers are 54K and 58K, which are closer to those of their Auger components, 32K and 31K, and far below those of their spontaneous components, 148K and 250K. It implies that Auger recombination plays an important role on the temperature characteristics of the lasers especially at high temperature.
Subjects
銻砷化鎵/砷化鎵
第二型量子井雷射:
GaAsSb/GaAs
type-II quantum well lasers
Type
thesis
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