Structure and Ultraviolet Electroluminescence of n-ZnO/SiO2-ZnO Nanocomposite/p-GaN Heterostructure Light-Emitting Diodes
Resource
IEEE Transactions on Electron Devices, 57(9), 2195-2202
Journal
IEEE Transactions on Electron Devices
Journal Volume
57
Journal Issue
9
Pages
2195-2202
Date Issued
2010
Date
2010
Author(s)
Shih, Ying-Tsang
Wu, Mong-Kai
Chen, Hsing-Chao
Tsai, Hung-Ling
Li, Wei-Chih
Kuan, Hon
Shiojiri, Makoto
Abstract
We fabricated and characterized ultraviolet (UV) light-emitting diodes (LEDs) composed of n -ZnO/SiO 2 -ZnO nanocomposite/ p -GaN heterostructures. Significant UV electroluminescence at 387 nm from the n -ZnO layer in this heterostructure LED was observed at a forward-bias current of as low as 1.8 mA. This is ascribed to the high quality of the n -ZnO layer and the effective function of the SiO 2 -ZnO nanocomposite layer. The SiO 2 -ZnO nanocomposite layer accomplishes the role of current blocking by forming the larger energy barrier for electron injection from n -ZnO into p -GaN and also contributes to, due to its low refractive index, higher light extraction efficiency from the n -ZnO layer.
Type
journal article
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