Self-regulating and diameter-selective growth of GaN nanowires
Journal
Nanotechnology
Journal Volume
17
Journal Issue
11
Pages
S332-S337
Date Issued
2006
Author(s)
Kuo, C.-K.
Hsu, C.-W.
Wu, C.-T.
Lan, Z.-H.
Mou, C.-Y.
Chen, C.-C.
Yang, Y.-J.
Abstract
We report diameter-selective growth of GaN nanowires (NWs) by using mono-dispersed Au nanoparticles (NPs) on a ligand-modified Si substrate. The thiol-terminal silane was found to be effective in producing well-dispersed Au NPs in low density on Si substrates so that the agglomeration of Au NPs during growth could be avoided. The resultant GaN NWs exhibited a narrow diameter distribution and their mean diameter was always larger than, while keeping a deterministic relation with, the size of the Au NPs from which they were grown. A self-regulating steady growth model is proposed to account for the size-control process.
Publisher
Institute of Physics Publishing
Type
journal article