A p-(Al,Ga)As/GaAs Modulation-doped heterostructure prepared by liquid phase epitaxy
Journal
Journal of Physics and Chemistry of Solids
Journal Volume
47
Journal Issue
10
Pages
975-979
Date Issued
1986
Author(s)
Sun, T.-B.
Abstract
A p-type (Al,Ga)As/GaAs modulation-doped heterostructure was successfully fabricated by liquid phase epitaxy. Its mobility and sheet hole concentration as a function of the aluminum composition were studied in the temperature range of 77-400 K. It is found that the hole mobility is enhanced whenever the aluminum mole fraction x is between x = 0.05 and 0.5. The maximum mobility obtained at 77 K is 3200 cm2 V sec for Al0.2Ga0.8As/GaAs with a 300 Å spacer layer. It is concluded that the hole mobility can be enhanced at low temperature as long as the holes are spatially separated from their parent atoms no matter whether due to a valence band discontinuity or an impurity concentration gradient. © 1986.
Subjects
AlGaAs; heterostructure; liquid phase epitaxy; mobility; Modulation-doped
Other Subjects
SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; HETEROSTRUCTURE; LIQUID PHASE EPITAXY; MOBILITY; MODULATION-DOPED; SEMICONDUCTOR DEVICES
Type
journal article