Dependence of the structure and orientation of VSS grown Si nanowires on an epitaxy process
Journal
CrystEngComm
Journal Volume
21
Journal Issue
29
Pages
4298-4304
Date Issued
2019
Author(s)
Chiang Y.-T.; Chou Y.; Huang C.-H.; Lin W.-T.; Chou Y.-C.
DOI
CRECF
Abstract
We investigated the vapor-solid-solid growth of Si nanowires from Ni silicides on Si(111), Si(110), and GaN substrates. The morphology and structures of Si on these substrates are distinct, and are dependent on substrate lattices and an epitaxy process during growth. The sidewall facets and epitaxy of silicides and Si were discussed. In addition, Si grown on GaN nanowires was investigated which led to the formation of branched nanowire structures. The Si nanowires/nanodots lie on the surface of GaN nanowires to maintain lower system energy. We manipulated the whole process in a UHV and studied the crystal growth of Si on different lattice substrates. Meanwhile, the process which occurred in a non-UHV led to less regularity on the NiSi2 crystal facets and interface epitaxy between NiSi2 and Si nanowires. © 2019 The Royal Society of Chemistry.
Subjects
Gallium nitride; III-V semiconductors; Morphology; Nanowires; Nickel compounds; Silicides; Substrates; Branched nanowires; Crystal facets; GaN nanowires; GaN substrate; Morphology and structures; Structure and orientation; Substrate lattice; Whole process; Silicon
Publisher
Royal Society of Chemistry
Type
journal article