Advanced materials for MOS capacitor and Schottky barrier Diode
Date Issued
2009
Date
2009
Author(s)
Shen, Yu-Yang
Abstract
In this work, we will study three important topics of advanced metal-oxide-semiconductor field-effect transistors technology which are HfAlOx dielectric, poly-InAs gate and SiGe quantum well.he material and electrical properties, ambient stability of the MOS capacitors with HfAlOx dielectric after PDA at different temperature have been studied. We observe the degradation of the electrical properties for the HfAlOx film with exposure to air due to the moisture absorption.he material and electrical characteristics of the MOS capacitors using the p+poly-InAs gate electrodes are discussed. The experimental result confirms that the 1μm poly-InAs is thick enough to dominate the work function of gate electrodes. The threshold voltage (Vth) of the Al/p+ poly-InAs gate devices has positive shift as compared to the control Al gate.he C-V and I-V characteristics of the SiGe quantum well Schottky barrier diode have performed. The holes confinement makes the depletion capacitance and the reverse current increase. And the conventional C-V method can not be used to measure the barrier height of the SiGe quantum well Schottky barrier diodes.
Subjects
High-k material
InAs
SiGe quantum well
MOS capacitor
Type
thesis
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