Publication: Power gain modeling of Si quantum dots embedded in a SiOx waveguide amplifier with inhomogeneous broadened spontaneous emission
cris.lastimport.scopus | 2025-05-09T22:15:55Z | |
cris.virtual.department | Electrical Engineering | en_US |
cris.virtual.department | Photonics and Optoelectronics | en_US |
cris.virtual.orcid | 0000-0003-2061-1282 | en_US |
cris.virtualsource.department | 4bc7a35d-c821-40be-a943-94dbd05f80fd | |
cris.virtualsource.department | 4bc7a35d-c821-40be-a943-94dbd05f80fd | |
cris.virtualsource.orcid | 4bc7a35d-c821-40be-a943-94dbd05f80fd | |
dc.contributor.author | Wu, C.-L. | en_US |
dc.contributor.author | GONG-RU LIN | en_US |
dc.creator | Wu, C.-L.;Lin, G.-R. | |
dc.date.accessioned | 2020-06-11T06:39:03Z | |
dc.date.available | 2020-06-11T06:39:03Z | |
dc.date.issued | 2013 | |
dc.identifier.doi | 10.1109/JSTQE.2012.2222357 | |
dc.identifier.scopus | 2-s2.0-84877851751 | |
dc.identifier.uri | https://scholars.lib.ntu.edu.tw/handle/123456789/500323 | |
dc.identifier.url | https://www.scopus.com/inward/record.uri?eid=2-s2.0-84877851751&doi=10.1109%2fJSTQE.2012.2222357&partnerID=40&md5=1f97c8221bda4538954c323276893328 | |
dc.relation.ispartof | IEEE Journal on Selected Topics in Quantum Electronics | |
dc.relation.journalissue | 5 | |
dc.relation.journalvolume | 19 | |
dc.title | Power gain modeling of Si quantum dots embedded in a SiOx waveguide amplifier with inhomogeneous broadened spontaneous emission | en_US |
dc.type | journal article | en |
dspace.entity.type | Publication |