Structural, optical and surface science studies of 4H-SiC epilayers grown by low pressure chemical vapor deposition

Resource

J. Electronic Materials,25,917-923.

Journal

J. Electronic Materials

Journal Issue

25

Pages

917-923

Date Issued

1996-01

Date

1996-01

Author(s)

Feng, Z.C.

Rohatgi, A.

Tin, C.C.

Hu, R.

Wee &amp, A.T.S.

Se, K.P.

URI

Type

journal article