C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications
Journal
Solid-State Electronics
Journal Volume
39
Journal Issue
8
Pages
1133-1136
Date Issued
1996
Author(s)
Abstract
Interface properties of Ga2O3-GaAs structures fabricated using in-situ multiple-chamber molecular beam epitaxy have been investigated. The oxide films were deposited on clean, atomically ordered (100) GaAs surfaces at ≅600°C by electron-beam evaporation using a Gd3Ga5O12 single-crystal source. Metal-oxide-semiconductor (MOS) capacitors were characterized by quasi-static capacitance voltage (C-V) as well as by C-V and conductance voltage (G-V) measurements at frequencies ranging from 100 Hz to 1 MHz. A midgap interface state density Dit in the low 1010 cm-2eV-1 range has been inferred from C-V measurements using the quasi-static/high frequency technique. Although interface trap loss is almost entirely masked by oxide loss, a wide bottom of the Dit-E characteristic extending from Ev + 0.27 eV to Ec - 0.19 eV has been concluded from G-V measurements. The formation of inversion layers in both n- and p-type GaAs has been clearly established. Copyright © 1996 Elsevier Science Ltd.
Type
journal article