C-V and G-V characterization of in-situ fabricated Ga2O3-GaAs interfaces for inversion/accumulation device and surface passivation applications

Journal

Solid-State Electronics

Journal Volume

39

Journal Issue

8

Pages

1133-1136

Date Issued

1996

Author(s)

Passlack, M.

Mannaerts, J.P.

DOI

10.1016/0038-1101(96)00006-8

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443499

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-0030216999&doi=10.1016%2f0038-1101%2896%2900006-8&partnerID=40&md5=8faa48b3fa189e76b8ca8d81e5a0c1d1

Type

other