SiGe Metal-Oxide-Semiconductor Optoelectronics Devices and Strained-Si Technology
Date Issued
2007
Date
2007
Author(s)
Liao, Ming Han
DOI
en-US
Abstract
In this dissertation, two important topics are included. One is the SiGe based metal-insulator-semiconductor (MIS) light-emitting diodes (LED). The other is the strained Si technology which has received a lot of attention in the semiconductor industry, recently.
Part I: It is a long sought goal to integrate ultralarge scale integrated (ULSI) circuits with the electro-optics to possibly overcome the speed limitation of electrical interconnects and to add extra functionalities on Si chip. LEDs and detectors are essential devices to achieve this goal. Ge based optoelectronic device also attracts great interest for scientific research and practical applications, recently. We have developed successfully a Ge MIS tunneling diodes which can serve both as a light emitter and a photodetector at a suitable bias. Data communication between the Ge MIS LED and the Ge MIS photodetector is also demonstrated up to 15 Mbit/sec.
Part II: The strained silicon technology and package strain is reviewed and studied. The past several years have witnessed rapid growth in the study of strained silicon due to its potential ability to improve the performance of very large scale integrated circuits. In this work, we investigate the strain effect on the energy band structure firstly by strained Si MIS LED. The effective mass, scattering rate, and mobility in strained Si were also calculated theoretically by K.P model and compared with experimental data. The optimization of 3D device structure in strained Si device and Package strain technology has also been demonstrated further in this dissertation.
Subjects
金屬氧化半導體光電元件
矽鍺
應變矽技術
SiGe
Optoelectronics
Strained Si technology
Package strain
Type
thesis
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