Characteristics of strained-germanium p- and n-channel field effect transistors on a Si (1 1 1) substrate

Journal

Semiconductor Science and Technology

Journal Volume

22

Journal Issue

4

Pages

342-347

Date Issued

2007

Author(s)

Maikap, S.

Lee, M.H.

Chang, S.T.

DOI

10.1088/0268-1242/22/4/008

URI

http://www.scopus.com/inward/record.url?eid=2-s2.0-34047225367&partnerID=MN8TOARS

http://scholars.lib.ntu.edu.tw/handle/123456789/332397

Type

journal article