Modeling the Floating-Body-Effect-Related Breakdown and the Kink Behavior of 40nm PD SOI NMOS Device Via SPICE BJT/MOS Model Approach
Date Issued
2009
Date
2009
Author(s)
Su, Jhih-Siang
Abstract
This thesis reports modeling the floating-body-effect-related breakdown and the kink behavior of 40nm PD SOI NMOS device via the SPICE BJT/MOS model approach。First, in Chapter 1 introduction of PD SOI NMOS device is introduced。Then in Chapter 2 the current conduction mechanism of the PD-SOI NMOS device is described, followed by the SPICE BJT/MOS models。In Chapter 3, effectiveness of the BJT/MOS models approach is evaluated for nanometer PD-SOI NMOS devices via SPICE simulation result. As verified by the experimentally measured data and the 2D simulation results, this compact SOI model provides an accurate prediction. Chapter 4 is conclusion and future work。
Subjects
SOI
Type
thesis
File(s)![Thumbnail Image]()
Loading...
Name
ntu-98-R96943096-1.pdf
Size
23.32 KB
Format
Adobe PDF
Checksum
(MD5):5e655079abf7a03c71637c5b98746de9