Study on different isolation technology on the performance of blue micro-LEDs array applications
Journal
Discover Nano
Journal Volume
19
Journal Issue
1
ISSN
2731-9229
Date Issued
2024-06-13
Author(s)
Shao-Hua Lin
Yu-Yun Lo
Yu-Hsuan Hsu
Hsiao-Wen Zan
Yi-Hsin Lin
Dong-Sing Wuu
Ching-Lien Hsiao
Ray-Hua Horng
Abstract
AbstractIn this study, a 3 × 3 blue micro-LED array with a pixel size of 10 × 10 μm2 and a pitch of 15 μm was fabricated on an epilayer grown on a sapphire substrate using metalorganic chemical vapor deposition technology. The fabrication process involved photolithography, wet and dry etching, E-beam evaporation, and ion implantation technology. Arsenic multi-energy implantation was utilized to replace the mesa etching for electrical isolation, where the implantation depth increased with the average energy. Different ion depth profiles had varying effects on electrical properties, such as forward current and leakage currents, potentially causing damage to the n-GaN layer and increasing the series resistance of the LEDs. As the implantation depth increased, the light output power and peak external quantum efficiency of the LEDs also increased, improving from 5.33 to 9.82%. However, the efficiency droop also increased from 46.3 to 48.6%.
Publisher
Springer Science and Business Media LLC
Type
journal article