Effective electron mass in high-mobility SiGe/Si/SiGe quantum wells
Journal
JETP Letters
Journal Volume
100
Journal Issue
2
Pages
114-119
Date Issued
2014
Author(s)
Abstract
The effective mass m* of the electrons confined in high-mobility SiGe/Si/SiGe quantum wells has been measured by the analysis of the temperature dependence of the Shubnikov-de Haas oscillations. In the accessible range of electron densities, n s , the effective mass has been found to grow with decreasing n s , obeying the relation m*/m b = n s /(n s − n c ), where m b is the electron band mass and n c ≈ 0.54 × 1011 cm−2. In samples with maximum mobilities ranging between 90 and 220 m2/(V s), the dependence of the effective mass on the electron density has been found to be identical suggesting that the effective mass is disorder-independent, at least in the most perfect samples.
Type
journal article