Fabrication and Characterization of Gallium Nitride Nano-Structure Light-Emitting Diode
Date Issued
2007
Date
2007
Author(s)
Hwa, Ming-Cheng
DOI
zh-TW
Abstract
In this thesis, I present the growth, analyzing, fabrication, and characterization of gallium nitride (GaN) nano-crystal light emitting devices. The growth of GaN nano-crystal structures was conducted in a home-built vapor-liquid-solid (VLS) system. The following spectroscopic instrument of scanning electron microscopy (SEM), photoluminescence (PL), x-ray diffraction (XRD), energy dispersive spectrometer (EDS), Auger, and transmission electron microscopy (TEM) were used to characterize the morphology, composition, and crystalline properties of the GaN nano-structures grown by the VLS method.
From the PL analysis pumped by a 248nm Krypton Fluoride (KrF) excimer laser, we observed a peak emission wavelength at 372nm and a full width at half maximum (FWHM) of 16nm. From the EDS and Auger data analysis we identify the material’s composition to be binary GaN. Data from the XRD and TEM analyses suggest the GaN nano-crystals grown by the VLS method to be single crystalline.
Light-emitting devices based upon the VLS-grown GaN nano-structures were further fabricated and characterized. From the electroluminescence (EL) study we observed a spectral blue shift in the emission peak wavelength from 590nm to 490nm as the injection current was increase from 5 mA to 20 mA.
Subjects
V-L-S
氮化鎵
奈米線
GaN
nanowire
Type
thesis
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