A Novel Deep Junction Edge Termination for Superjunction MOSFETs

Journal

IEEE Electron Device Letters

Journal Volume

39

Journal Issue

4

Pages

544-547

Date Issued

2018

Author(s)

Cheng, C.-H.

Huang, C.-F.

Lee, K.-Y.

Zhao, F.

DOI

10.1109/LED.2018.2803199

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/451511

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-85041546790&doi=10.1109%2fLED.2018.2803199&partnerID=40&md5=89ecb99f861f3ab6311d58026cb8a682

Type

journal article