Strain on wrinkled bilayer thin film
Journal
Applied Physics Letters
Journal Volume
91
Journal Issue
5
Date Issued
2007
Author(s)
Abstract
The authors report strain measurement on bilayer wrinkling silicon-germanium (SiGe) thin film. In combination of atomic force microscopy and ultraviolet micro-Raman measurement, the relationship between the spatial profile and strain distribution is established. Theoretical analysis on the mechanism of strain relaxation shows that, in contrast to self-rolling nanotube, both bending and shearing force play an important role in determining the morphology. The behavior demonstrated in the SiGe system should also exist in a wide range of material systems under various strain situations. This study advances the understanding of nanostructure engineered by strain and has significant implications on the performance of nanodevices.
Type
journal article