Constant peak field distribution and voltage dropping in the oxide layer of a MOS capacitor during charge-temperature aging
Journal
International Journal of Electronics
Journal Volume
62
Journal Issue
6
Pages
849-856
Date Issued
1987
Author(s)
Abstract
The newly proposed charge-temperature technique is basically different from the conventional bias-temperature technique. In the former one the total charges on the metal gate are constant, while in the tatter one, the bias voltage across the sample is constant. The peak value of the electric field in the oxide layer of a MOS capacitor is proposed to be constant during charge-temperature aging; and therefore the voltage across the oxide is supposed to be decreased after charge-temperature aging. This assumption is proved to be true experimentally for either positive or negative charge-temperature treatment. Finally, successive charge-temperature agings with the same charging voltage can be regarded as the transition process of bias-temperature aging.
SDGs
Type
journal article