彈性應變對自組式量子點光電特性之影響(1/3)
Date Issued
2004-07-31
Date
2004-07-31
Author(s)
DOI
922212E002072
Abstract
In this year’s project, the models based on
linear elasticity and thermal stress theory
are developed to evaluate the strain
distribution in the InAs/GaAs selfassembled
quantum dot. The lattice
mismatch in heterostructures induces the
strain field which caculated by finite
element package—FEMLAB. The
Schrödinger equation, including the straininduced
potential is also solved by means of
the finite element method. The solutions
consist of the eigenenergy and the
probability density function of the
conduction band.
We treat the models by two different
approaches, anisotropic material analysis
and isotropic material simplification. Our
results show that the strain effects shift the
eigenenergy and the degeneracy of low
eigenenergy. When considering the
eigenenergy and the corresponding
probability density function, the differences
between two methods are small. Therefore,
it is suitable to treat InAs and GaAs as an
isotropic material.
Subjects
Self-assembled quantum dot
Strain field
Finite element method
Schrödinger equation
Publisher
臺北市：國立臺灣大學應用力學研究所
Type
report
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