Short-Circuit Reliability Analysis of SG-MOSFETs Versus Planar 4H-SiC MOSFETs
Journal
Key Engineering Materials
Journal Volume
1057
Start Page
63
End Page
68
ISSN
10139826
Date Issued
2026
Author(s)
Abstract
This work investigates the short-circuit (SC) reliability of Split-Gate (SG) versus planar 4H-SiC MOSFETs through TCAD simulations. While SG-MOSFETs effectively reduce gate-drain capacitance and improve switching performance, SG-MOSFETs exhibit enhanced short-circuit failure effects. Structural optimization—such as thicker drift regions, extended gate lengths, and narrowed JFET widths—can improve SC withstand time (SCWT). However, SG-MOSFETs suffer from intensified electric field crowding and enhanced drain-induced barrier lowering (DIBL), leading to greater post-SC leakage and thermal instability. Results suggest SG-MOSFETs require careful field and oxide engineering to ensure reliability under fault conditions.
Subjects
drain-induced barrier lowering (DIBL)
gate oxide field crowding
short-circuit reliability
silicon carbide (SiC)
split-gate MOSFET (SG-MOSFET)
Publisher
Trans Tech Publications Ltd
Type
journal article