High-performance self-aligned inversion-channel In0.53Ga 0.47As metal-oxide-semiconductor field-effect-transistors by in-situ atomic-layer-deposited HfO2
Journal
Applied Physics Letters
Journal Volume
103
Journal Issue
25
Date Issued
2013
Author(s)
Lin, T.D.
Chang, W.H.
Chu, R.L.
Chang, Y.C.
Chang, Y.H.
Lee, M.Y.
Hong, P.F.
Chen, M.-C.
Kwo, J.
Type
journal article