Morphotropic phase boundary (MPB)-engineered HfO2 to reduce coercive field (Ec) for energy-efficient FeFETs
Journal
Materials Science in Semiconductor Processing
Journal Volume
212
Start Page
110806
ISSN
1369-8001
Date Issued
2026-09
Author(s)
Abstract
Ferroelectric field-effect transistors (FeFETs) based on Hf1-xZrxO2 are investigated with a focus on morphotropic phase boundary (MPB) engineering to simultaneously enhance polarization and reduce coercive field. A super-laminated HZO/ZrO2/HZO (HZZ) stack was fabricated by ALD, showing a dielectric constant of 46 and a remanent polarization of 41 μC/cm2 with coercive field (Ec) reduced to 0.8 MV/cm. Compared to HZO and HfO2/ZrO2/HfO2 (HZH), HZZ enables a wider memory window of 1.6 V under a smaller applied sweep bias for efficient polarization switching at low operation voltage. Endurance measurements demonstrate stable program/erase cycling up to 1011 cycles with an on/off ratio exceeding 105. These results highlight the HZZ-FeFET as a scalable and energy-efficient device platform, offering robust reliability and promising potential for high-density nonvolatile memory and neuromorphic computing.
Publisher
Elsevier BV
Type
journal article