Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation
Resource
Applied Physics Letters 83 (5): 911-913
Journal
Applied Physics Letters
Journal Volume
83
Journal Issue
5
Pages
911-913
Date Issued
2003
Date
2003
Author(s)
Abstract
Electron relaxation and transport dynamics in low-temperature-grown GaAs under 1 eV optical excitation were investigated. Femtosecond transient transmission measurement and electro-optical sampling measurement in bulk samples and fabricated devices were used in the investigation. The results show that an increase in the electron lifetime can be observed when the electron density is higher than 3 × 1017 cm-3.
Other Subjects
Electric field effects; Gallium compounds; Scattering; Electron relaxation; Electrooptical effects
Type
journal article
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