Energy-Saving Logic Gates Utilizing Coupling Phenomenon between MIS(p) Tunneling Diodes
Journal
IEEE Transactions on Electron Devices
Journal Volume
68
Journal Issue
12
Pages
6558-6562
Date Issued
2021
Author(s)
Abstract
In this work, based on coupling mechanism between Al/SiO2/Si(p) metal-insulator-semiconductor (MIS) tunneling diodes (TDs), a multilevel open-circuit voltage sensor was developed. With selected input voltage signals applied at several outer MIS TDs and open-circuit voltage read at inner MIS TD serving as output signal, multiple levels of ${V}_{\text {out}}$ - ${V}_{\text {in}}$ curves can be achieved. The mechanism behind this phenomenon is related to charge coupling between two adjacent MIS TDs. According to this result, a novel concept of logic gates accommodating multiple inputs and with ultralow power consumption was further proposed. Finally, a 2-D TCAD simulation was implemented to confirm our speculation and experimental result. This notion is believed to overcome the difficulties about sophisticated logic function encountered in conventional CMOS circuit and be extremely conducive to logic computation on electronics chip in the future. ? 1963-2012 IEEE.
Subjects
Charge coupling
logic gates
low power consumption
metal-insulator-semiconductor (MIS) tunneling diode (TD)
Computation theory
Computer circuits
Doping (additives)
Electric power utilization
Energy conservation
Metal insulator boundaries
Open circuit voltage
Semiconductor diodes
Energy-savings
Logic functions
Low-power consumption
Lower-power consumption
Metal-insulator-semiconductor tunneling diode .
Metal-insulator-semiconductors
Open-circuit voltages
Power demands
Tunneling
Logic gates
SDGs
Type
journal article