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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
Details
Turn-on Transient Behavior of PD SOI NMOS Device Considering the Back-Gate Bias Effect
Journal
International Semiconductor Devices Research Symposium
Date Issued
2013-12
Author(s)
D. H. Lung
J. B. Kuo
D. Chen
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/381397
Type
conference paper