Light Trapping Induced High Short-Circuit Current Density in III-Nitride Nanorods/Si (111) Heterojunction Solar Cells
Journal
Nanoscale Research Letters
Journal Volume
15
Journal Issue
1
Date Issued
2020
Author(s)
Abstract
An effective-area photovoltaic efficiency of 1.27% in power conversion, excluding the grid metal contact area and under 1 sun, AM 1.5G conditions, has been obtained for the p-GaN/i-InGaN/n-GaN diode arrays epitaxially grown on (111)-Si. The short-circuit current density is 14.96 mA/cm2 and the open-circuit voltage is 0.28 V. Enhanced light trapping acquired via multiple reflections within the strain and defect free III-nitride nanorod array structures and the short-wavelength responses boosted by the wide bandgap III-nitride constituents are believed to contribute to the observed enhancements in device performance. © 2020, The Author(s).
Subjects
III-nitride; Light trapping; Nanorod; Photovoltaic device; Plasma-assisted molecular beam epitaxy; Solar cell
SDGs
Other Subjects
Gallium nitride; Heterojunctions; III-V semiconductors; Nanorods; Nitrides; Open circuit voltage; Solar cells; Solar power generation; Timing circuits; Voltage measurement; Device performance; Epitaxially grown; Heterojunction solar cells; Multiple reflections; Nano-rod arrays; Photo-voltaic efficiency; Power conversion; Short wavelengths; Wide band gap semiconductors
Type
journal article