K-band Si/SiGe HBT MMIC amplifiers using lumped passive components with a micromachined structure
Journal
IEEE RFIC Symposium
Pages
17-20
Date Issued
1998-06
Author(s)
L.-H. Lu
J.-S. Rieh
P. Bhattacharya
L. P. B. Kahehi
E. T. Croke
G. E. Ponchak
S. A. Alterovitz
Abstract
Using Si/SiGe heterojunction bipolar transistors with a maximum oscillation frequency of 52 GHz and a novel structure for passive components, a two-stage K-band lumped-element amplifier has been designed and fabricated on high-resistivity Si substrates. The chip size including biasing and RF chokes is 0.92/spl times/0.67 mm/sup 2/.
SDGs
Type
conference paper