Determination of augai-xas bandgap by schottky barrier spectral response measurement
Journal
Journal of the Chinese Institute of Engineers, Transactions of the Chinese Institute of Engineers,Series A/Chung-kuo Kung Ch'eng Hsuch K'an
Journal Volume
9
Journal Issue
3
Pages
317-322
Date Issued
1986
Author(s)
Abstract
Abstract The G 1c –G 15v bandgap of the Al x Ga1–x As compound semiconductor with x ranging from 0.06 to 0.87 was determined by fitting their Schottky barrier spectral response with a device model. Since the spectral response near the Al x Ga1_ x As bandgap is proportional to its absorption coefficient, the bandgap could also be obtained by direct extrapolation of the square response versus photon energy curve to zero response. Both results are shown to be in good agreement. Using samples with x larger than 0.48, we could also observe additional responses originated from G 15v to X 1c and L 1c indirect transitions. By using least‐squared fit we obtained not only the X band but also the L band energies. The electrolyte electroreflectance method was also applied to measure the direct bandgap of those samples with x ranging from 0.06 to 0.59, and gave similar results.
SDGs
Type
journal article