Mapping band alignment across complex oxide heterointerfaces
Journal
Physical Review Letters
Journal Volume
109
Journal Issue
24
Date Issued
2012
Author(s)
Huang, B.-C.
Huang, P.-C.
Wang, W.-C.
Tra, V.T.
Yang, J.-C.
He, Q.
Lin, J.-Y.
Chang, C.-S.
Chu, Y.-H.
Abstract
In this study, direct observation of the evolution of electronic structures across complex oxide interfaces has been revealed in the LaAlO 3/SrTiO3 model system using cross-sectional scanning tunneling microscopy and spectroscopy. The conduction and valence band structures across the LaAlO3/SrTiO3 interface are spatially resolved at the atomic level by measuring the local density of states. This study directly maps out the electronic reconstructions and a built-in electric field in the polar LaAlO3 layer. Results also clearly reveal the band bending and the notched band structure in the SrTiO3 adjacent to the interface. © 2012 American Physical Society.
SDGs
Other Subjects
Atomic levels; Band alignments; Bandbending; Built-in electric fields; Complex oxides; Cross-sectional scanning tunneling microscopies; Hetero-interfaces; Local density of state; Model system; Spatially resolved; SrTiO; Band structure; Electronic structure; Lanthanum alloys; Scanning tunneling microscopy; Strontium titanates
Type
journal article