Characteristic Improvement of Al2O3/InAs Metal-Oxide-Semiconductor Capacitor and Analysis of Accumulation Frequency Dispersion
Date Issued
2015
Date
2015
Author(s)
Liu, Fu-Wei
Abstract
In this study, we use different treatments to improve the characteristic Metal-oxide-semiconductor capacitor (MOS-Cap) of Al2O3 on InAs. We applied the Try-methyl-aluminum (TMA) pretreatment plus NH4OH chemical treatment before oxide growth, and the native oxide was effectively reduced, which is confirmed by XPS. We also applied the HNO3 post oxidation and post deposition annealing, and the border trap in oxide was effectively reduced and the accumulation frequency dispersion was suppressed. Then, we applied post metal annealing to improve the Fermi level pinning effect and hysteresis effect. Finally, the accumulation frequency dispersion value, the capacitance modulation, n-factor, and the hysteresis voltage of our device are 1.42 %/dec, 31.4 %, 0.14 and 150 mV. By using the effective circuits of border trap, we can fit our capacitance in accumulation and fit our oxide capacitance. The interface trap density of 1.12×10^13 /eV*cm^2 was extracted by using the fitting oxide capacitance and G-V method. The low leakage current density of 2×10^-8 A/cm^2 at ±1 V was also obtained.
Subjects
InAs
Al2O3
ALD
MOS-Cap
Fermi level pinning
Chemical treatment
Border trap
Accumulation frequency dispersion
Type
thesis
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