Remarkably High Hole Mobility Metal-Oxide Thin-Film Transistors
Journal
Scientific Reports
Journal Volume
8
Journal Issue
1
Date Issued
2018
Author(s)
Abstract
of SnO p-TFT is due to its considerably unique merit of the small effective mass and single hole band without the heavy hole band. The high performance p-TFTs are the enabling technology for future ultra-low-power complementary-logic circuits on display and three-dimensional brain-mimicking integrated circuits.
SDGs
Type
journal article