Identification of tunneling peaks in the GaAs/AlAs/GaAs resonant tunneling diode by magnetic fields
Journal
1994 International Electron Devices and Materials Symposium, EDMS 1994
Date Issued
1994
Author(s)
Shieh, T.-H.
Abstract
The two tunneling mechanisms of the X band resonant tunneling and X band electrons tunneling through the r band confined states can be verified by applying the magnetic field to these structures. For X band electrons tunneling through the X band profile, the peak current and peak voltage remain the same whether the magnetic field is transverse or parallel to the current flow direction. However, for X band electrons tunneling through r band confined state, the peak current and peak voltage vary significantly with the transverse magnetic field but change much less with the parallel magnetic field.
Type
conference paper