Motion Control of a Hydraulic Stewart Platform with Computed Force Feedback
Resource
Journal of the Chinese Institute of Engineers 24 (6): 709-721
Journal
Journal of the Chinese Institute of Engineers
Journal Volume
24
Journal Issue
6
Pages
709-721
Date Issued
2001
Date
2001
Author(s)
Hsu, Chih-Chin
Fong, I-Kong
Abstract
The surface breakdown induced by the electric-field spike existing in the gate overlay region and the device perimeter region is suspected to be one of the main factors which limit the charge storage capacity of a narrow bandgap InSb dual-gate metal-insulator-semiconductor (MIS) charge injection device (CID). In this study, a two-dimensional theoretical simulation is used to investigate the effect of device parameters, including bias voltage, oxide thickness, gate structure, gate overlay length, and field oxide thickness on the electric-field spike height in an InSb CID. In addition, it is found that a graded oxide structure can be used to lower the electric field spike. © 1990.
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journal article
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