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  4. Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 Gb/s OOK
 
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Zinc-induced mirror disordering for high-speed 850 nm VCSEL operated at 40 Gb/s OOK

Journal
CS MANTECH 2018 - 2018 International Conference on Compound Semiconductor Manufacturing Technology
Date Issued
2018
Author(s)
Peng C.-Y
Wu C.-H
Leong S.-F
CHAO-HSIN WU  
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85050015905&partnerID=40&md5=ea800fd8ff7a3d4495b5122798c36c44
https://scholars.lib.ntu.edu.tw/handle/123456789/580593
Abstract
Through the zinc-induced disordering of mirror resistance, vertical-cavity surface-emitting lasers (VCSEL) with 22.5 GHz optical 3dB bandwidth and 40 Gbps on-off-key (OOK) transmission are successfully achieved. VCSELs exhibit lower threshold current and higher optical bandwidth after applying 1.5 m depth of zinc-induced disordering. With 20-ohm series-resistance reduction, the maximum optical bandwidth can be effectively improved from 19.7 to 22.5 GHz. In addition, the threshold current can be simultaneously reduced from 0.29 to 0.22 mA. ? 2018 GaAs Mantech Incorporated. All Rights Reserved.
Subjects
Amplitude shift keying; Bandwidth; Electric resistance; Laser mirrors; Semiconductor device manufacture; Transceivers; Zinc; 3 dB bandwidth; 40 Gb/s; 40-Gbps; High Speed; Optical band width; Series resistances; Threshold currents; Surface emitting lasers
Type
conference paper

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