Charge trapping characteristics of atomic-layer-deposited HfO<inf>2</inf> films with Al<inf>2</inf>O<inf>3</inf> as a blocking oxide for high-density non-volatile memory device applications
Journal
Semiconductor Science and Technology
Journal Volume
22
Journal Issue
8
Pages
884-889
Date Issued
2007
Author(s)
Maikap, S.
Lee, H.Y.
Wang, T.-Y.
Tzeng, P.-J.
Wang, C.C.
Lee, L.S.
Liu, K.C.
Yang, J.-R.
Tsai, M.-J.
Type
journal article