Skip to main content
English
中文
Log In
Log in
Log in with ORCID
NTU Single Sign On
New user? Click here to register.
Have you forgotten your password?
Home
College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
Details
Role of lateral diffusion current in perimeter-dependent current of MOS(p) tunneling temperature sensors
Journal
IEEE Transactions on Electron Devices
Journal Volume
61
Journal Issue
10
Pages
3562-3565
Date Issued
2014
Author(s)
Lin, Y.-K.
Hwu, J.-G.
JENN-GWO HWU
DOI
10.1109/TED.2014.2346238
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84907474205&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/385258
Type
journal article