Room-Temperature Operation of Gaas Bragg-Mirror Lasers
Journal
Applied Physics Letters
Journal Volume
29
Journal Issue
10
Pages
684-686
Date Issued
1976
Author(s)
Abstract
Room-temperature operation of GaAs distributed Bragg reflector lasers is reported. The diodes are fabricated from conventional double heterostructures involving only a single step of liquid-phase epitaxy. For gratings with a period of 3700 Å, the diodes lased at 8770 Å, which corresponds to the high-absorption side of the spontaneous emission spectrum. Thresholds as low as 6 kA/cm2 have been realized.
SDGs
Type
journal article