Ultra-high mobility two-dimensional electron gas in a SiGe/Si/SiGe quantum well
Journal
Applied Physics Letters
Journal Volume
106
Journal Issue
9
Date Issued
2015
Author(s)
Melnikov, M.Yu.
Shashkin, A.A.
Dolgopolov, V.T.
Huang, S.-H.
Liu, C.W.
Kravchenko, S.V.
Abstract
We report the observation of an electron gas in a SiGe/Si/SiGe quantum well with maximum mobility up to 240 m2/Vs, which is noticeably higher than previously reported results in silicon-based structures. Using SiO, rather than Al2O3, as an insulator, we obtain strongly reduced threshold voltages close to zero. In addition to the predominantly small-angle scattering well known in the high-mobility heterostructures, the observed linear temperature dependence of the conductivity reveals the presence of a short-range random potential.
Type
journal article