Temperature and substrate effects in monolithic RF inductors on silicon with 6-μm-thick top metal for RFIC applications
Journal
IEEE Transactions on Semiconductor Manufacturing
Journal Volume
19
Journal Issue
3
Pages
316-330
Date Issued
2006
Author(s)
Abstract
Comprehensive analyses of the effects of temperature (from to 200 ), silicon substrate thickness, and proton implantation postprocess on the performances of a set of planar spiral inductors with 6- -thick top metal are demonstrated. Quality-factor (Q-factor) and power gain decrease with increasing temperatures but show a reverse behavior within a higher frequency range. Stability-factor (K-factor) and noise figure (NF) increase with increasing temperatures but show a reverse behavior within a higher frequency range. The reverse frequencies , which correspond to the zero temperature coefficient of , K-factor, and NF, are almost the same. In addition, both the silicon substrate thinning and proton implantation are verified to be effective in improving the Q-factor and NF performances of inductors on silicon. The present analyses enable RF engineers to understand more deeply the Q-factor and NF behavior of inductors fabricated on a thin silicon substrate (20 ) and hence are helpful for them to design high-performance fully on-chip low-noise-amplifiers and other RF integrated circuits.
Type
journal article