Efficiency improvement of InGaN LEDs at elevated temperature with dome-shaped patterned-sapphire substrates
Journal
Optics InfoBase Conference Papers
Date Issued
2021
Author(s)
Chen M.-H
Kuan C.-H
Su V.-C.
CHIEH-HSIUNG KUAN
Abstract
The efficiency of InGaN LEDs working at elevated temperatures has been improved by introducing patterned-sapphire substrates with dome-shaped nanostructures of the optimized height through the analysis of electroluminescence of devices using an integrating sphere. ? OSA 2021, ? 2021 The Author(s)
Subjects
Efficiency
Electroluminescence
Gallium alloys
III-V semiconductors
Indium alloys
Sapphire
Semiconductor alloys
Efficiency improvement
Elevated temperature
InGaN LED
Integrating spheres
Patterned sapphire substrate
Domes
Type
conference paper