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  4. Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer
 
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Sequential infiltration synthesis and pattern transfer using 6 nm half-pitch carbohydrate-based fingerprint block copolymer

Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
11612
Date Issued
2021
Author(s)
Löfstrand, A.
Jafari, Jam R.
Mumtaz, M.
Mothander, K.
Nylander, T.
Vorobiev, A.
Rahaman, A.
WEN-CHANG CHEN  
Borsali, R.
Maximov, I.
DOI
10.1117/12.2583803
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-85103335676&doi=10.1117%2f12.2583803&partnerID=40&md5=f7fafc6e33695376388162fb602ed0a8
https://scholars.lib.ntu.edu.tw/handle/123456789/576788
Abstract
This study presents how sequential infiltration synthesis of trimethyl aluminium and water into a carbohydrate-based block copolymer was used to enable pattern transfer of 6 nm half-pitch horizontal cylinders into silicon. Specular neutron reflectometry measurements of poly(styrene)-block-maltoheptaose self-assembled into horizontal cylinders indicate an increasing content of alumina after each sequential infiltration cycle, comparing 0, 1, 2, and 4 cycles, with alumina content reaching 2.4 vol% after four infiltrations cycles. Dry etching processes in inductively coupled plasma reactive ion etching for sub-10 nm patterns were developed, using a two-step technique: O2-plasma for polymer removal and a reactive ion etching of Si using a mixture of SF6 and C4F8 gases. Etch selectivity of more than 2:1 of silicon over alumina-like etch mask material was achieved. To evaluate the etching process, the etched Si structures were measured and characterized by scanning electron microscopy. These results are expected to be of use for nanofabrication and applications in the sub-10 nm regime. ? SPIE. Downloading of the abstract is permitted for personal use only.
Subjects
Alumina; Aluminum oxide; Block copolymers; Carbohydrates; Cylinders (shapes); Dry etching; Inductively coupled plasma; Reactive ion etching; Scanning electron microscopy; Styrene; Alumina content; Dry etching process; Etch selectivity; Horizontal cylinders; Inductively coupled-plasma reactive ion etching; Neutron reflectometry; Pattern transfers; Two-step technique; Silicon
SDGs

[SDGs]SDG6

[SDGs]SDG9

Type
conference paper

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