Study on the Structure and Process of MOS Photo and Temperature Sensitive Devices
Date Issued
2012
Date
2012
Author(s)
Wang, Chih-Yao
Abstract
In this work, we will focus on the characteristics of inversion tunneling currents for ultra-thin oxide prepared by low temperature process and the MOS structure applications, including photo device and temperature sensor. We will discuss the interesting applications of the MOS device with ultra-thin oxide and the tunneling mechanism.
In the first part, the MOS structure solar cell with ultra-thin oxide prepared by anodization (ANO) technique is studied. The direct tunneling mechanism was adopted for the conduction of the photo current and electron transfer. For the first time, the technique of using ANO in D.I. water to prepare the SiO2 of the MOS structure solar cell was proposed. An efficiency of 12.78 % was found in this work. In the second part, the side-wall oxide surface with etch then natural oxide passivation (ENOP) photo detector is studied by using the trap-assisted tunneling mechanism to sense photon. This trench structure is similar with the tunneling ultra-thin oxide. The ratio of photo to dark current is ten thousand times, which means the vertical structure with side-wall trap-assisted tunneling is very photosensitive. In the third part, the stacked HfO2/SiO2 MOS tunneling temperature sensor was studied. It was found that the saturation current of the stacked HfO2/SiO2 MOS tunneling temperature sensor was gradually affected by Frenkel-Poole effect as temperature is higher than 70°C.
Subjects
ultra-thin oxide
solar cell
temperature sensor
HfO2
Type
thesis
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