Stable single-mode 850 nm VCSELs with a higher-order mode absorber formed by shallow Zn diffusion
Journal
The Pacific Rim Conference on Laser and Electro-Optics, 2001 (CLEO/Pacific Rim ’01)
Pages
II588-II589
Date Issued
2001-07
Author(s)
Abstract
We report that an 850 nm VCSEL with a planar higher-order mode absorber formed by shallow Zn diffusion (<0.3 /spl mu/m deep) operated at stable single-mode. A 5 /spl mu/m square device showed single-mode emission with a /spl sim/ 0.8 mA threshold, a 2.2 mW maximum output power, and a mode suppression ratio of 40 dB.
SDGs
Type
conference paper